MRF8S19260HSR6【PDF 1/14 页】FET RF N-CH 1.9GHZ 30V NI1230S-8

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MRF8S19260HR6 MRF8S19260HSR6

RF Device Data

Freescale Semiconductor, Inc.

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA and multicarrier base station applications with

frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for

all typical cellular base station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=30Volts,IDQ

1600 mA, Pout

= 74 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

1930 MHz

17.6

33.2

5.9

--36.0

1960 MHz

18.0

33.6

5.8

--35.7

1990 MHz

18.2

34.5

5.7

--34.6

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 390 Watts CW

(1)

Output Power (3 dB Input Overdrive from Rated Pout)

Typical Pout

@ 1 dB Compression Point

245 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(2,3)

225

°C

CW Operation @ TC

=25°C

Derate above 25°C

291

1.48

W/°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(3,4)

Unit

Thermal Resistance, Junction to Case

Case Temperature 85°C, 74 W CW, 30 Vdc, IDQ

= 1600 mA, 1990 MHz

(1),30Vdc,IDQ

= 1600 mA, 1990 MHz

Case Temperature 91°C, 260 W CW

RθJC

0.30

0.28

°C/W

1. Exceeds recommended operating conditions. See

CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

4. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF8S19260H

Rev. 1, 2/2012

Freescale Semiconductor

Technical Data

1930--1990 MHz, 74 W AVG., 30 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

MRF8S19260HR6

MRF8S19260HSR6

CASE 375I--04

NI--1230--8

MRF8S19260HR6

CASE 375J--03

NI--1230S--8

MRF8S19260HSR6

(Top View)

27RFoutA/VDSA

Figure 1. Pin Connections

36RFoutB/VDSB

RFinA/VGSA

RFinB/VGSB

18VBWA

N.C.

45VBWB

Freescale Semiconductor, Inc., 2010, 2012.

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